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100V 200mA SOT-23 High Voltage Switching Diode / BAS19 CJ High Speed Switching Diode

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100V 200mA SOT-23 High Voltage Switching Diode / BAS19 CJ High Speed Switching Diode

Brand Name : CANYI

Model Number : BAS19

Certification : RoHS

Place of Origin : Guangdong, China

MOQ : Negotiable1000PCS

Price : Negotiated

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 15,000,000PCS Per Day

Delivery Time : 1 -2 Weeks

Packaging Details : Boxed

Type : Switching Diode

Package Type : SOT23

forward current : 200mA

reverse voltage : 100V

reverse current : 100nA

reverse recovery time : 50ns

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100V 200mA SOT-23 high voltage Switching Diode BAS19 CJ high speed switching diode in stock


High speed diode general description:

  • High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package.


SMD switching diode features:

  1. High switching speed: trr ≤ 50 ns
  2. Low leakage current
  3. Reverse voltage VR ≤ 100 V
  4. Low capacitance: Cd ≤ 5 pF
  5. Small SMD plastic package

High speed switching diode applications:

  1. High-speed switching at high voltage
  2. High-voltage general-purpose switching
  3. Voltage clamping
  4. Reverse polarity protection

Pin

Symbol

Description
1

A

anode
2

n.c.

not connected
3 K

cathode

Absolute Maximum Rating

Symbol

Parameter

Conditions

M

Max

Unit

VRRM

repetitive peak reverse

voltage

 120 V

VR

reverse voltage

 100 V

IF

forward current

continuous

 200 mA

IFSM

non-repetitive peak

forward current

tp = 1 µs; Tj(init) = 25 °C; square wave

 9 A

tp = 100 µs; Tj(init) = 25 °C; square wave

 3 A

tp = 10 ms; Tj(init) = 25 °C; square wave

 1.7 A

IFRM

repetitive peak forward

current

 625 mA

Ptot

total power dissipation

Tamb ≤ 25 °C

 250 mW

Tj

junction temperature

 150

℃

Tamb

ambient temperature

-55 -150

 ℃

Tstg

storage temperature

-65 -150

 ℃

Characteristics

Symbol

Parameter

Conditions

M

Max

Unit

VF

forward voltage

IF = 100 mA; Tj = 25 °C

 1 V

IF = 200 mA; Tj = 25 °C

 1.25 V

IR

reverse current

VR = 100 V; Tj = 25 °C

 100 nA

VR = 100 V; Tj = 150 °C

 100

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tamb = 25 °C

 5

pF

trr

reverse recovery time

IF = 30 mA; IR = 30 mA; RL = 100 Ω;

IR(meas) = 3 mA; Tamb = 25 °C

 50 ns

Please contact with us to get your best price and service~

(1) Original quantity with wholesale price
(2) Quick and Safe Delivery
(3) Experienced Service Team
(4) Good feedback from all over the world
(5) Full range products for choice


Contact:Wendy Yan
Email:wendy@zd_schottkysignaldiode.ecer.com
Whatsapp/Wechat:+86 13423609933
Skype:wendy@doublelight.com.cn


Product Tags:

high speed switching diode

      

small signal switching diode

      
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